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       Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Super Fast Recovery Diode RF505TF6S ?Series ?Dimensions (Unit : mm) ?Structure Standard Fast Recovery ?Applications General rectification ?Features 1)Low switching loss 2)High current overload capacity ?Construction Silicon epitaxial planer ?Absolute maximum ratings (Tc=25 ?C) Parameter ConditionsSymbol Limits Unit VRM 600 V VR 600 V Average rectified forward current Io 5 A60Hz half sin wave, Resistance load, Tc=125°C Tj 150 ?C Tstg ?55 to ?150 ?C ?Electrical characteristics (Tj=25 ?C) Symbol Min. Typ. Max. Unit Forward voltage VF － 1.3 1.7 V IR － 0.03 10 μA trr － 22 30 ns Thermal resistance Rth(j-c) －－3 °C/W one cycle peak value, Tj=25°C Reverse voltage Repetitive peak reverse voltage 80 A Storage temperature Junction temperature Forward current surge peak IFSM Conditions IF=5A Parameter junction to case Reverse recovery time VR=600V IF=0.5A,IR=1A,Irr=0.25×IR Reverse current Duty≤0.5 Direct voltage 60Hz half sin wave, Non-repetitive |